报道了在钝化界面进行低能等离子体植氢优化的n+onp碲镉汞(HgCdTe)中波(MW，midwavelength)光伏红外探测芯片的研究成果.基于由采用分子束外延技术生长的HgCdTe薄膜材料，通过注入阻挡层的生长、注入窗口的光刻、形成光电二极管的B+注入、钝化介质膜的生长、优化钝化界面的等离子体植氢、金属化和铟柱列阵的制备等工艺，得到了钝化界面植氢优化的HgCdTe中波红外探测芯片.从温度为78K的电流与电压(IV)和动态阻抗与电压(RV)特性曲线中，发现钝化界面植氢优化的HgCdTe红外中波探测芯片的光电二极管开启电压比未经过植氢处理的增加了50mV左右，零偏与反偏动态阻抗提高了10倍，且正向串连电阻也明显减小.这表明钝化界面等离子体植氢处理可以抑制HgCdTe中波光电二极管的暗电流和优化探测芯片的欧姆接触，从而能提高中波红外焦平面探测器的探测性能.

Abstract

The results of n+onp HgCdTe midwavelength infrared detector with a passivation interface is presented. The interface passivation process was optimized using highdensity hydrogen plasma implantation. By implantation barrier layer deposition, ionimplantation window exposure, B+ implantation, passivation film deposition, plasma hydrogenimplantation, metallization and indiumbump arrays fabrication, n+onp HgCdTe midwavelength infrared detector was obtained from a Hg1-xCdxTe film grown by MBE. Cutin voltages of HgCdTe midwavelength detector Photodiodes with interface optimized were 50mV approximately larger than those of the one without optimization. The dynamic resistances at zero bias and reverse bias region were improved 10 times and dynamic resistances at the larger forward region were decreased significantly. Thus, it is obvious that plasma hydrogenimplantation is beneficial to suppress the dark currents and improve the ohmic contact of HgCdTe midwavelength infrared detector photodiodes, and then to enhance the operating dynamic range and performance uniformity.